| PART |
Description |
Maker |
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
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MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
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| IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
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General Electric Solid State
GE Solid State
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| 2N20 |
Drain Current ID= 2A@ TC=25C
|
Inchange Semiconductor ...
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| 2SK1703 |
Drain Current ?ID= 5A@ TC=25C
|
Inchange Semiconductor ...
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| 2SK1662 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
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| 2SK844 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
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| 2SK1600 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
| 1N65 |
Drain Current ID= 1.2A@ TC=25C
|
Inchange Semiconductor ...
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| 2SK1462 |
Drain Current ?ID=8A@ TC=25C
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Inchange Semiconductor ...
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| 2SK1465 |
Drain Current ?ID=8A@ TC=25C
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Inchange Semiconductor ...
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